| 摘要 |
PROBLEM TO BE SOLVED: To decrease apparatus downtime during a cleaning process by minimizing silicon film deposition in the treatment chamber. SOLUTION: In this method, a phosphine (PH<SB>3</SB>)-containing gas is introduced into the treatment chamber for the treatment of a substrate. After the treated substrate is carried out of the treatment chamber, a cleaning gas (ClF<SB>3</SB>) is introduced into the treatment chamber for cleaning the inside of the treatment chamber. After cleaning, a monosilane (SiH<SB>4</SB>)-containing gas, high in reactivity with metals polluted in the treatment chamber due to cleaning is introduced into the treatment chamber for purging the cleaning gas out of the treatment chamber for a rapid decrease in the metal pollution level. It is preferred that the purging process proceeds under specified conditions for approximately 30 minutes for the thickness of the silicon film deposited on the treatment chamber inner walls to be≤0.1 nm so that the adverse effect of the deposited silicon film is eliminated on the PH<SB>3</SB>gas-treated substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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