| 摘要 |
PROBLEM TO BE SOLVED: To realize miniaturization and integration of a semiconductor device easily. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of performing element isolation of an SOI layer 16 on a buried oxide film 14 with a pair of element isolation regions 40 having vertical sidewalls, forming a polycrystalline silicon layer 50 on the SOI layer 16 subjected to the element isolation, implanting an impurity into the polycrystalline silicon layer 50; forming a silicon oxide film 60 on the polycrystalline silicon layer 50, selectively removing the silicon oxide film 60 and the polycrystalline silicon layer 50 in a gate formation region, forming a ress in the gate formation region by selectively removing the SOI layer 16 in the region down to a constant depth, forming a sidewall spacer 80 on the side wall of the recess, forming a source/drain region by diffusing the impurity from the polycrystalline silicon layer 50 into the SOI layer 16, and forming a gate electrode by forming a gate insulating film 74 on the bottom of the recess and then forming a gate metal layer 76. COPYRIGHT: (C)2006,JPO&NCIPI
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