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发明名称
PARALLEL BIT TEST CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE CAPABLE OF ACCESSING INNER DATA AND PARALLEL BIT TEST METHOD THEREOF
摘要
申请公布号
KR100535251(B1)
申请公布日期
2005.12.02
申请号
KR20040043264
申请日期
2004.06.12
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, YOUNG SUK;LEE, MAHN JOONG
分类号
G11C29/00;G11C29/40;G11C29/44;(IPC1-7):G11C29/00
主分类号
G11C29/00
代理机构
代理人
主权项
地址
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