发明名称 SEMICONDUCTOR CRYSTAL FOR GENERATING TERAHERTZ WAVE, TERAHERTZ WAVE GENERATING APPARATUS AND METHOD USING CRYSTAL, AND TERAHERTZ WAVE DETECTING DEVICE AND ITS METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a crystal having OR effect and EO (electrooptic) effect which highly effectively generate and detecte terahertz waves using ultrashort light pulses in an optical communication wavelength band, to provide an apparatus and a method for highly efficiently generating terahertz waves using the crystal, and to provide a device and a method for detecting terahertz waves. <P>SOLUTION: The crystal for detecting terahertz wave pulses is a zinc blende type group III-V compound semiconductor crystal for emitting sampled light modulated with an electric field signal of the terahertz wave pulses, by being irradiated in overlapping temporarily and spacially with terahertz wave pulses and sampling light that is ultrashort light pulses in an optical communication wavelength band. The terahertz wave generating apparatus comprises a light source 1 for generating pump light that is the ultrashort light pulses in the optical communication wavelength band, and the zinc blende type group III-V compound semiconductor crystal 2 with a predetermined thickness for generating terahertz wave pulses by being irradiated with the pump light generated from the light source 1. The terahertz wave detection apparatus further includes overlapping irradiation means 4 to a compound semiconductor crystal 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005332954(A) 申请公布日期 2005.12.02
申请号 JP20040149576 申请日期 2004.05.19
申请人 AISIN SEIKI CO LTD;TANAKA KOICHIRO 发明人 OTAKE HIDEYUKI;SUGIURA TOSHIJI;BESSHO TOSHIAKI;TANAKA KOICHIRO;NAGAI MASAYA;KADOYA YUTAKA
分类号 H01S3/00;G01J5/10;G02F1/35;G02F1/355;H01L31/0304;H01S1/02;(IPC1-7):H01S3/00 主分类号 H01S3/00
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