| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure of a GaN based compound semiconductor LED capable of achieving luminous efficiency improvement and operating voltage reduction. <P>SOLUTION: This GaN based compound semiconductor LED is equipped with a substrate, an n-type contact layer and an active layer composed of a GaN based compound semiconductor, and a semiconductor laminate structure composed of the GaN based compound semiconductor either between the n-type contact layer and the substrate or between the active layer and the substrate, or both of them. The semiconductor laminate structure comprises at least a primary n-type layer composed of undoped GaN, and a secondary n-type layer formed in contact with the primary n-type layer and composed of Al<SB>x</SB>Ga<SB>1-x</SB>N (where 0≤x≤1) in which n-type impurities are doped. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
