| 摘要 |
PROBLEM TO BE SOLVED: To suppress the complication of a manufacturing step and improve a current driving force of a field effect transistor. SOLUTION: A p-type impurity for adjusting threshold is applied to a semiconductor layer 2a through ion implantation, and an n-type impurity for adjusting threshold is applied to a semiconductor layer 2b through ion implantation. Then, a semiconductor layer 5a made of non-doped semiconductor is formed on the semiconductor layer 2a by epitaxial growth. Thus, a p-channel type field effect transistor is formed on the semiconductor layer 5a, and an n-channel type field effect transistor is formed on the semiconductor layer 2b. COPYRIGHT: (C)2006,JPO&NCIPI
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