| 摘要 |
PROBLEM TO BE SOLVED: To reduce variation in profile of concave patterns when a plurality of the concave patterns are formed on an insulating film containing Si, O and C by using dry etching which uses etching gas containing fluorocarbon. SOLUTION: When a plurality of the concave patterns are formed on the insulating film containing Si, O and C by using dry etching which uses etching gas containing fluorocarbon, carbon content ratio in the etching gas defined by formula (1):p=X×(Qc/Q)×100 (where X is carbon component ratio X in fluorocarbon C<SB>X</SB>F<SB>Y</SB>, Q is total flow rate of the etching gas, and Qc is flow rate of fluorocarbon C<SB>X</SB>F<SB>Y</SB>) is set to at most 5%. COPYRIGHT: (C)2006,JPO&NCIPI
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