| 摘要 |
PROBLEM TO BE SOLVED: To form a heterostructure by a compound semiconductor crystal of a lattice constant closer to that of InP on a GaAs substrate while suppressing the generation of dislocation at a minimum level. SOLUTION: The InGaP buffer layer 3 of thickness of 5 nm or more and 500 nm or less is formed on the semi-insulating GaAs substrate 1, and the heterostructure is formed by laminating an InAlAs layer 4 and an InGaAs channel layer 5 thereon. A condition that too much In is present is created in the vicinity of an upper layer portion of the layer 3 since In segregation phenomenon is generated when the layer 3 is formed. As a result, since the composition of a surface of the layer 3 is very closer to that of the InP, the generation of misfit dislocation which is likely to result in the worsening of a surface condition is suppressed. In addition, this method provides good surface conditions of the layers 4 and 5 formed thereon. COPYRIGHT: (C)2006,JPO&NCIPI
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