| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of suppressing variations of pattern forms caused by an optical proximity effect, reducing an operation processing amount of an optical proximity effect correction, and suppressing variations of a transistor characteristic caused by an eye deviation on manufacturing and variations of a gate dimensionality, especially, to provide a memory cell structure of SRAM. <P>SOLUTION: Contacts 7 for mutually connecting diffusion layers 4 and polysilicons 5 with metal wirings 6 are arranged on intersections 9 of grids 8 which partition a memory cell 1 in a constant interval. And, there are provided dummy contacts 7a on the intersections 9 where any contact is not arranged, thereby intervals among all contacts 7 are kept constant, influences caused by the optical proximity effect are made uniform, the variations of the pattern forms are suppressed and the operation processing amount of the optical proximity effect correction is reduced. And, the diffusion layers 4 and the polysilicons 5 near a transistor are linearly formed, curved portions are lost, gate forms are equalized, and the variations of the transistor characteristic are suppressed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
