首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
类比至数位转换方法、类比至数位转换器、供侦测实体数量分布之半导体装置、以及电子配置
摘要
本发明揭示一种在包括类比至数位转换器之固态成像装置中的时脉转换器,其产生的高速时脉快于主时脉。电压比较器比较各列控制线自垂直信号线输入的像素信号和参考电压,以产生具有强度对应于时间方向之重设成分或信号成分的脉冲。计数器计数脉冲信号的宽度直到在电压比较器中根据基于高速时脉产生的时脉完成比较,并保留完成比较时的计数值。通信及时序控制器行使控制,使电压比较器执行量设成分的比较及计数器执行第一处理迭代的递减计数,并使电压比较器执行信号成分的比较及计数器执行第二处理迭代的递增计数。
申请公布号
TW200539694
申请公布日期
2005.12.01
申请号
TW094110873
申请日期
2005.04.06
申请人
新力股份有限公司
发明人
村松良德;福岛范之;新田嘉一;安井幸弘
分类号
H04N5/335;H01L27/146
主分类号
H04N5/335
代理机构
代理人
陈长文
主权项
地址
日本
您可能感兴趣的专利
Normally off gallium nitride field effect transistors (FET)
Power semiconductor device
MOS P-N junction Schottky diode device and method for manufacturing the same
Method for manufacturing semiconductor device
Semiconductor device with epitaxial semiconductor layer for source/drain on substrate, and method of manufacturing the same
Package substrate, manufacturing method thereof, and mold therefor
Zero stand-off bonding system and method
Semiconductor device and method of mounting die with TSV in cavity of substrate for electrical interconnect of Fi-PoP
Laser reflectometry for substrate processing
Post-etch treating method
Integrated platform for improved wafer manufacturing quality
Method of manufacturing semiconductor device and semiconductor device having oxide film crystallized by a thermal treatment
Gallium nitride semiconductor structures with compositionally-graded transition layer
Imaging apparatus and medical equipment
Structure and method to realize conformal doping in deep trench applications
Breakdown voltage multiplying integration scheme
Voltage regulator using N-type substrate
Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods
Accessory controller for electronic devices
Multilayer ceramic electronic component and board for mounting the same