| 摘要 |
A method for forming an improved fully silicided gate electrode in a semiconductor device in which the fully silicided gate electrode is formed using indirect heating. One embodiment relates to a method of manufacturing at least one semiconductor device. The method includes depositing silicon to a first thickness, depositing metal over the silicon, and indirectly heating the metal and silicon to form a metal silicide having a second thickness not less than the first thickness. Another embodiment relates to a method of manufacturing semiconductor devices, each semiconductor device having a fully silicided control electrode. The method includes providing a substrate, forming a dielectric layer over the substrate, forming a silicon-containing layer over the dielectric layer, depositing a metal-containing layer over the silicon-containing layer, and indirectly heating the metal-containing and silicon-containing layers to form a silicide layer in contact with the dielectric layer.
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