| 摘要 |
A semiconductor device includes an upper electrode, a lower electrode, a capacitor insulating film formed between the upper and lower electrodes, and containing aluminum, a first nitrogen-containing film formed between the capacitor insulating film and upper electrode, and containing nitrogen, and a second nitrogen-containing film formed between the capacitor insulating film and lower electrode, and containing nitrogen, wherein at least one of the first and second nitrogen-containing films contains not less than 1% of nitrogen.
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