| 摘要 |
A method of forming films in a trench is applied to the manufacturing process of a power MOS device. In one embodiment, the method comprises providing a semiconductor substrate, forming a trench in the semiconductor substrate, forming a first dielectric layer on sidewalls of the trench, forming a second dielectric layer on the first dielectric layer, and forming a polysilicon layer in the trench. The method of forming films in a trench of the present invention can reduce or eliminate the thermal stress resulting from the different thermal expansion coefficients of different material layers after high temperature process.
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