发明名称 |
ESD protective circuit for low voltages with two interconnected field effect transistors |
摘要 |
<p>The protective circuit has a first field effect transistor (42) which has a first drain, a first source and a first control terminal. The circuit also has an input network (40). This changes the voltage between the first control terminal and the first source by means of a voltage applied between the first drain and the first source. The input network has a second field effect transistor complementary to the first. The drain of the first FET is connected to the source of the second and is also connected via a resistor to the base of the second FET. The drain of the second FET is connected to the base of the first and, via a resistor, to the source of the first.</p> |
申请公布号 |
DE102005013687(B3) |
申请公布日期 |
2005.12.01 |
申请号 |
DE20051013687 |
申请日期 |
2005.03.18 |
申请人 |
ATMEL GERMANY GMBH |
发明人 |
KLAUSSNER, MANFRED;GROMBACH, PETER |
分类号 |
H01L23/60;H01L27/02;H02H9/04;H03K17/082;H03K17/30;(IPC1-7):H01L23/60 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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