发明名称 ESD protective circuit for low voltages with two interconnected field effect transistors
摘要 <p>The protective circuit has a first field effect transistor (42) which has a first drain, a first source and a first control terminal. The circuit also has an input network (40). This changes the voltage between the first control terminal and the first source by means of a voltage applied between the first drain and the first source. The input network has a second field effect transistor complementary to the first. The drain of the first FET is connected to the source of the second and is also connected via a resistor to the base of the second FET. The drain of the second FET is connected to the base of the first and, via a resistor, to the source of the first.</p>
申请公布号 DE102005013687(B3) 申请公布日期 2005.12.01
申请号 DE20051013687 申请日期 2005.03.18
申请人 ATMEL GERMANY GMBH 发明人 KLAUSSNER, MANFRED;GROMBACH, PETER
分类号 H01L23/60;H01L27/02;H02H9/04;H03K17/082;H03K17/30;(IPC1-7):H01L23/60 主分类号 H01L23/60
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