发明名称 |
WIDE BANDGAP TRANSISTORS WITH MULTIPLE FIELD PLATES |
摘要 |
A transistor (10) comprises an active region (18) having a channel and source (20) and drain (22) electrodes in contact with the active region. A gate (24, 124,142) is between the source and drain electrodes and on the active region. A plurality of field plates (30,42) is arranged on the active region, each extending toward the drain electrode, and each of which is isolated from the active region and from the others of the field plates. The topmost (42) of the field plates electrically is connected to the source electrode. |
申请公布号 |
CA2566361(A1) |
申请公布日期 |
2005.12.01 |
申请号 |
CA20052566361 |
申请日期 |
2005.04.14 |
申请人 |
CREE, INC. |
发明人 |
MOORE, MARCIA;WU, YIFENG;MISHRA, UMESH;PARIKH, PRIMIT |
分类号 |
H01L29/778;H01L29/06;H01L29/20;H01L29/40;H01L31/0328;H01L31/0336 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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