发明名称 Chip bonding process
摘要 A bonding process includes the following process. A bump is formed on a first electric device. A patterned insulation layer is formed on a second electric device, wherein the patterned insulation layer has a thickness between 5 mum and 400 mum, and an opening is in the patterned insulation layer and exposes the second electric device. The bump is joined to the second electric device exposed by the opening in the patterned insulation layer.
申请公布号 US2005266670(A1) 申请公布日期 2005.12.01
申请号 US20050124493 申请日期 2005.05.05
申请人 发明人 LIN MOU-SHIUNG;LIN SHIH H.;LO HSIN-JUNG
分类号 H01L21/44;H01L21/48;H01L21/50;H01L21/56;H01L21/60;H01L21/98;H01L23/485;H01L25/065;(IPC1-7):H01L21/44 主分类号 H01L21/44
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