发明名称 |
Non-magnetic semiconductor spin transistor |
摘要 |
A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.
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申请公布号 |
US2005263751(A1) |
申请公布日期 |
2005.12.01 |
申请号 |
US20050068562 |
申请日期 |
2005.02.28 |
申请人 |
HALL KIMBERLEY C;LAU WAYNE H;GUNDOGDU KENAN;FLATTE MICHAEL E;BOGGESS THOMAS F |
发明人 |
HALL KIMBERLEY C.;LAU WAYNE H.;GUNDOGDU KENAN;FLATTE MICHAEL E.;BOGGESS THOMAS F. |
分类号 |
H01L29/06;H01L29/66;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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主权项 |
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地址 |
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