| 摘要 |
According to the present invention, there is provided a semiconductor device, comprising: a gate electrode formed on a substrate via a gate insulating film by using a first silicide film; diffusion layers formed in a surface portion of said substrate so as to be positioned at two ends of a channel region below said gate electrode, and having a second silicide film on surfaces thereof; a first insulating film formed on said second suicide film of said diffusion layers; and a second insulating film continuously formed on said first insulating film and said gate electrode, wherein a total film thickness of said first and second insulating films on said second silicide film is larger than a film thickness of said second insulating film on said gate electrode.
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