发明名称 |
WIDE BANDGAP HEMTS WITH SOURCE CONNECTED FIELD PLATES |
摘要 |
A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT. |
申请公布号 |
WO2005114744(A2) |
申请公布日期 |
2005.12.01 |
申请号 |
WO2005US09884 |
申请日期 |
2005.03.24 |
申请人 |
CREE, INC. |
发明人 |
WU, YIFENG;PARIKH, PRIMIT;MISHRA, UMESH;MOORE, MARCIA |
分类号 |
H01L29/06;H01L29/20;H01L29/40;H01L29/778 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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