| 摘要 |
A pixel of a thin film transistor array substrate and a method for making the same are used to reduce exposure time and prevent the pixel from being exposed to light beams with uneven light intensity in a photolithography process, where the light beams with uneven light intensity resulting from protrusions of a stage in an exposure apparatus may result in forming undesired patterns in the pixel. The pixel includes a light-shielding layer formed below a photosensitive layer to shelter portions of the pixel from the light beams in order to prevent the light beams from irradiating the protrusions of the stage. Additionally, the light-shielding layer comprising a multi-layer reflective film or a metallic material with high reflectivity functions to reflect the light beams to irradiate the photosensitive layer again, thereby reducing the exposure time required by the photolithography process.
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