Fabrication of nonvolatile memory by sequentially forming first and second insulation layers on substrate, forming hard mask, depositing silicon, forming quantum dots, removing hard mask, forming third insulation layer, and forming gate

摘要

Fabrication of nonvolatile memory includes sequentially forming first and second insulation layers on a substrate where a predetermined device is formed, forming hard mask, depositing silicon on substrate where the hard mask is formed, forming quantum dots, removing hard mask, forming third insulation layer on substrate where the quantum dots are formed, and depositing conductive layer on the third insulation and patterning it to form a gate. Fabrication of nonvolatile memory includes sequentially forming first and second insulation layers on a substrate (10) where a predetermined device is formed, forming a hard mask by etching the second insulation layer, depositing silicon on the substrate where the hard mask is formed, forming quantum dots (14) by etching the silicon through an etch back process, removing the hard mask, forming a third insulation layer (15) on the substrate where the quantum dots are formed, and depositing a conductive layer on the third insulation and patterning it to form a gate (16b).