发明名称 SOI sense amplifier with cross-coupled bit line structure
摘要 Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.
申请公布号 US2005264323(A1) 申请公布日期 2005.12.01
申请号 US20040852889 申请日期 2004.05.25
申请人 NAKAZATO TAKAAKI;ASANO TORU;TAKAHASHI OSAMU;DHONG SANG 发明人 NAKAZATO TAKAAKI;ASANO TORU;TAKAHASHI OSAMU;DHONG SANG
分类号 G11C11/419;H03F3/45;(IPC1-7):H03F3/45 主分类号 G11C11/419
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