发明名称 |
Reducing the migration of grain boundaries |
摘要 |
A method of forming a semiconductor device includes implanting a precipitate into a gate conductor of an at least partially formed semiconductor device. The gate conductor including a plurality of semiconductor grains. The boundaries of adjacent grains forming a dopant migration path. A plurality of precipitate regions are formed within the gate conductor. At least some of the precipitate regions located at a junction of at least two grains. The gate conductor of the at least partially formed semiconductor device is doped with a dopant. The dopant diffuses inwardly along the dopant migration path.
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申请公布号 |
US2005263897(A1) |
申请公布日期 |
2005.12.01 |
申请号 |
US20050182929 |
申请日期 |
2005.07.15 |
申请人 |
LIU KAIPING;WU ZHIQIANG;CHEN JIHONG |
发明人 |
LIU KAIPING;WU ZHIQIANG;CHEN JIHONG |
分类号 |
H01L21/00;H01L21/28;H01L21/3205;H01L21/336;H01L21/44;H01L21/461;H01L23/48;H01L23/52;H01L29/40;H01L29/49;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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