发明名称 Page buffer of flash memory device and data program method using the same
摘要 Disclosed are a page buffer of a flash memory device and data program method using the same. After two data are sequentially stored in a main register (first latch) and a cache register (second latch) provided in a page buffer, they are respectively transferred to an even bit line and an odd bit line at the same time, and a bias needed for a program is applied to cells connected to the even bit line and the odd bit line, respectively, whereby the program is performed at the same time. Therefore, the number and time of operations for data loading, program operation and program verification can be reduced by half and the operating speed of the device can be improved.
申请公布号 US2005265078(A1) 申请公布日期 2005.12.01
申请号 US20040009749 申请日期 2004.12.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE JU Y.
分类号 G11C16/06;G11C16/02;G11C16/10;(IPC1-7):G11C16/06 主分类号 G11C16/06
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