发明名称 Modifying the viscosity of etchants
摘要 Semiconductor integrated circuit structures, such as stacks containing metal layers, may be etched with a modified viscosity etchant. An increased viscosity etchant, for example, may reduce undercutting when a metal film is being etched.
申请公布号 US2005263483(A1) 申请公布日期 2005.12.01
申请号 US20050196034 申请日期 2005.08.03
申请人 BRASK JUSTIN K;KAVALIEROS JACK;DOCZY MARK L;METZ MATTHEW;DATTA SUMAN;SHAH UDAY;CHAU ROBERT S 发明人 BRASK JUSTIN K.;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW;DATTA SUMAN;SHAH UDAY;CHAU ROBERT S.
分类号 B44C1/22;C09K13/00;C09K13/06;H01L21/302;H01L21/3213;(IPC1-7):B44C1/22 主分类号 B44C1/22
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