发明名称 |
Modifying the viscosity of etchants |
摘要 |
Semiconductor integrated circuit structures, such as stacks containing metal layers, may be etched with a modified viscosity etchant. An increased viscosity etchant, for example, may reduce undercutting when a metal film is being etched.
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申请公布号 |
US2005263483(A1) |
申请公布日期 |
2005.12.01 |
申请号 |
US20050196034 |
申请日期 |
2005.08.03 |
申请人 |
BRASK JUSTIN K;KAVALIEROS JACK;DOCZY MARK L;METZ MATTHEW;DATTA SUMAN;SHAH UDAY;CHAU ROBERT S |
发明人 |
BRASK JUSTIN K.;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW;DATTA SUMAN;SHAH UDAY;CHAU ROBERT S. |
分类号 |
B44C1/22;C09K13/00;C09K13/06;H01L21/302;H01L21/3213;(IPC1-7):B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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