Semiconductor device, electro-optic device, integrated circuit, and electronic apparatus

摘要

The present invention is directed to a semiconductor device with a thin film transistor on a substrate and a method of forming that semiconductor device and thin film transistor on a substrate. The thin film transistor on the substrate is created by forming a starting point section to be an origin of crystallization of a semiconductor film on the substrate. The semiconductor film is then formed on the substrate originally provided with the starting point. Heat treatment is executed on the semiconductor film to form a substantially single crystal grain having a substantially centered starting point. The semiconductor film is patterned to form a transistor region and a thin film transistor is formed with by forming a gate insulation layer and the gate electrode on the transistor region. The thickness of the semiconductor film of the thin film transistor is less than or equal to 1/7 of the channel length.