| 摘要 |
The invention relates to thermoelectric generators or Peltier systems comprising an antimonide as a semiconductor material. According to said method, a substituted antimonide is used, in which the crystal lattice of the metal antimonides is partially substituted with sulfides, selenides and/or tellurides of the metals antimony, silicon, germanium, zinc, lead, arsenic and/or bismuth. |
