METHOD OF FORMING A PATTERN

摘要

A method of forming a pattern for a semiconductor device is disclosed. According to the method, a lower photoresist layer is formed on a lower layer and an upper photoresist pattern including a silylated layer is formed on the lower photoresist layer. The upper photoresist pattern is used as a mask for etching the lower photoresist layer to thereby form a lower photoresist pattern. The upper and lower photoresist patterns are used as a mask for etching the lower layer beneath the lower photoresist pattern.