发明名称 Masken mit Mehrschichtfilmen niedriger Spannung und Verfahren zur Kontrolle von Spannungen in Mehrschichtfilmen
摘要 A process for controlling the stress of multilayer films formed on a substrate is disclosed. A plurality of periods, each period having at least two layers of material wherein one of the layers of material is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate. The stress in the multilayer film is controlled by selecting a thickness for the layer under compressive stress and a thickness for the layer under tensile stress that will provide a multilayer film of the desired stress. The thickness of each layer is about 0.5 nm to about 10 nm. Multilayer films with a stress of about -50 MPa to about 50 MPa are obtained using the present process. The present invention is also directed to masks with such multilayer films.
申请公布号 DE69533916(T2) 申请公布日期 2005.12.01
申请号 DE1995633916T 申请日期 1995.10.03
申请人 AT & T CORP., NEW YORK 发明人 HARRIOTT, LLOYD RICHARD;VOLKERT, CYNTHIA ANN;LIDDLE, JAMES ALEXANDER;WASKIEWICZ, WARREN KAZMIR;WINDT, DAVID LEE
分类号 G03F1/00;G03F1/22;H01L21/027 主分类号 G03F1/00
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