SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING METAL MESH STRUCTURE

摘要

A metal mesh structure for use in an integrated circuit is described. In one embodiment, a semiconductor integrated circuit includes a first region including, for example, a device layer having one or more active semiconductor devices. The circuit also includes a second region, which may include a metalization layer including circuit wires. The circuit further includes a layer of metal mesh interposed between the first and second regions, and which may be implemented on at least a portion of another metalization layer.