发明名称 |
Photoresist composition and method of forming a pattern using same |
摘要 |
A photoresist composition for preventing exposing failures and a method of forming a pattern using the same are disclosed. The photoresist composition preferably comprises about 0.1% to about 0.5% by weight of a photo acid generator, and about 2% to about 10% by weight of a polymer resin, the PAG including a monophenyl sulfonium compound, a triphenyl sulfonium compound or a mixture thereof. The footing phenomenon and the top loss of a pattern are sufficiently prevented.
|
申请公布号 |
US2005266342(A1) |
申请公布日期 |
2005.12.01 |
申请号 |
US20050141736 |
申请日期 |
2005.05.31 |
申请人 |
KIM KYOUNG-MI;YOUN YEU-YOUNG;WANG YOUN-KYUNG;KIM JAE-HO;KIM YOUNG-HO;KIM BOO-DEUK |
发明人 |
KIM KYOUNG-MI;YOUN YEU-YOUNG;WANG YOUN-KYUNG;KIM JAE-HO;KIM YOUNG-HO;KIM BOO-DEUK |
分类号 |
G03C1/492;G03F7/004;G03F7/039;(IPC1-7):G03C1/492 |
主分类号 |
G03C1/492 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|