| 发明名称 |
Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method |
| 摘要 |
A dry etching method for forming tungsten wiring having a tapered shape and having a large specific selectivity with respect to a base film is provided. If the bias power density is suitably regulated, and if desired portions of a tungsten thin film are removed using an etching gas having fluorine as its main constituent, then the tungsten wiring having a desired taper angle can be formed.
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| 申请公布号 |
US2005266593(A1) |
申请公布日期 |
2005.12.01 |
| 申请号 |
US20040902551 |
申请日期 |
2004.07.29 |
| 申请人 |
|
发明人 |
SUZAWA HIDEOMI;ONO KOJI |
| 分类号 |
H01L21/302;C23F4/00;G02F1/136;H01L21/28;H01L21/3065;H01L21/3205;H01L21/3213;H01L21/768;H01L21/77;H01L23/528;H01L23/532;H01L27/12;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/302 |
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代理人 |
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