RESIST COMPOUND AND RESIST COMPOSITION

摘要

A resist composition which comprises one or more resist compounds (A) satisfying all of the requirements of (a) having, in the molecule thereof, at least one crosslinking group undergoing a crosslinking reaction directly or indirectly by the irradiation with any radiation selected from the group consisting of a visible light, an ultraviolet ray, an excimer laser, an extreme ultraviolet ray (EUV), an electron beam, an X-ray and an ion beam, (b) having, in the molecule thereof, one or more functional groups selected from the group consisting of a urea group, a urethane group, an amino group and an imido group, (c) having a molecular weight of 500 to 5000, and (d) having a branched structure; and the resist compound. The above resist composition allows the formation of a resist pattern exhibiting an enhanced resolution, which results in the manufacture of a semiconductor element having a higher integration degree.