发明名称
摘要 <p>PROBLEM TO BE SOLVED: To ensure a uniform contact condition between a semiconductor element and a package electrode for reducing the thermal resistance and element resistance of a pressure contact type passage device. SOLUTION: Metal nets or embossed metal plates 6 are disposed between the main electrodes of a plurality of semiconductor elements 1 and main electrode plate 5 of a planar package, whereby a uniform pressure contact at a wide area can be realized simply at a comparatively low pressure, i.e., the height variations in the contact faces can be absorbed adequately to reduce the thermal and electrical resistances at the contact faces, which would become all the more difficult because of the increased size of the package with the increase of the wafer size, or parallel multi-chip arrangement of elements for increasing the capacity.</p>
申请公布号 JP3721795(B2) 申请公布日期 2005.11.30
申请号 JP19980227847 申请日期 1998.08.12
申请人 发明人
分类号 H01L29/74;H01L21/52;H01L29/78;(IPC1-7):H01L21/52 主分类号 H01L29/74
代理机构 代理人
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