发明名称 |
A method for forming a sidewall spacer for a metal oxide semi-conductor device |
摘要 |
<p>A method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device that includes striking a first plasma to form an oxide layer on a side of the gate electrode, where the first plasma is generated from a oxide gas that includes O3 and bis-(tertiarybutylamine)silane, and striking a second plasma to form a carbon-doped nitride layer on the oxide layer, where the second plasma may be generated from a nitride gas that includes NH3 and the bis-(tertiarybutylamine)silane. The first and second plasmas may be formed using plasma CVD and the bis-(tertiarybutylamine)silane flows uninterrupted between the striking of the first plasma and the striking of the second plasma.</p> |
申请公布号 |
EP1601011(A1) |
申请公布日期 |
2005.11.30 |
申请号 |
EP20050253219 |
申请日期 |
2005.05.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ARGHAVANI, REZA;MACWILLIAMS, KEN;M'SAAD, HICHEM |
分类号 |
H01L21/28;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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