| 摘要 |
A semiconductor device is provided, which prevents the development of localized breakdowns at the semiconductor sidewall, having a stabilized, desired breakdown voltage. It embraces a p-type third semiconductor region formed on a first main surface of an n-type semiconductor body; an n-type second semiconductor region selectively formed at the center of a second main surface; an n-type first semiconductor region formed between the third and the second semiconductor regions; and, n-type fourth semiconductor region surrounding the first and the second semiconductor regions. The impurity concentration of the first semiconductor region is set higher than that of the fourth semiconductor region. |
