| 摘要 |
A JUNCTION FIELD EFFECT TRANSISTOR (10) AND METHOD FOR MAKING IS DESCRIBED INCORPORATING HORIZONTAL SEMICONDUCTOR LAYERS (30, 34, 38) WITHIN AN OPENING TO FORM A CHANNEL (36) AND A SEMICONDUCTOR LAYER THROUGH WHICH THE OPENING WAS MADE WHICH FORMS A GATE ELECTRODE (18, 19) SURROUNDING THE CHANNEL. THE HORIZONTAL SEMICONDUCTOR LAYERS MAY BE A SIGE ALLOY WITH GRADED COMPOSITION NEAR THE SOURCE AND DRAIN. THE INVENTION OVERCOMES THE PROBLEM OF FORMING LOW RESISTANCE JFET'S AND PROVIDES A GATE LENGTH THAT IS EASILY SCALEABLE TO SUBMICRON DIMENSIONS FOR RF, MICROWAVE, MILLIMETER AND LOGIC CIRCUITS WITHOUT SHORT CHANNEL EFFECTS. |
