发明名称 |
Mosfet with electrostaic discharge protection structure and method of fabrication. |
摘要 |
A semiconductor circuit comprises a semiconductor substrate, a semiconductor device having a drain region disposed in the substrate, and a reverse doped region laterally adjacent and laterally contacting the drain region wherein the reverse doped region has an opposite doping type from that of the drain region and a dopant concentration higher than that of the semiconductor substrate, the reverse doped region and the drain forming a p-n junction. |
申请公布号 |
SG116560(A1) |
申请公布日期 |
2005.11.28 |
申请号 |
SG20040004838 |
申请日期 |
2004.08.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
SHAO-CHANG HUANG |
分类号 |
H01L21/8234;H01L23/60;H01L27/02;H01L27/088;H01L27/12;H01L29/786;H01L29/94 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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