发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
Disclosed herein is a method of manufacturing a semiconductor device, and more specifically, to a method of manufacturing a semiconductor device having a capacitor and a resistor in which a thin film resistor and a capacitor are formed at the same time, a thin film resistor is formed on a metal wiring, and the two thin film resistors are then serially connected. Accordingly, resistance per unit area in substrate can be increased, a device characteristic can be improved and a process unit price can be lowered. |
申请公布号 |
KR20050111415(A) |
申请公布日期 |
2005.11.25 |
申请号 |
KR20040036110 |
申请日期 |
2004.05.20 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
KEUM, SO HYEN;SHIN, CHAN SOO |
分类号 |
H01L27/04;H01L21/02;H01L21/20;H01L21/768;H01L23/522;H01L27/01;H01L27/06;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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