发明名称 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 Disclosed herein is a method of manufacturing a semiconductor device, and more specifically, to a method of manufacturing a semiconductor device having a capacitor and a resistor in which a thin film resistor and a capacitor are formed at the same time, a thin film resistor is formed on a metal wiring, and the two thin film resistors are then serially connected. Accordingly, resistance per unit area in substrate can be increased, a device characteristic can be improved and a process unit price can be lowered.
申请公布号 KR20050111415(A) 申请公布日期 2005.11.25
申请号 KR20040036110 申请日期 2004.05.20
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 KEUM, SO HYEN;SHIN, CHAN SOO
分类号 H01L27/04;H01L21/02;H01L21/20;H01L21/768;H01L23/522;H01L27/01;H01L27/06;(IPC1-7):H01L27/04 主分类号 H01L27/04
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