METHOD FOR MANUFACTURING SILICON WAFER

摘要

A buried oxide film is formed in an active layer-side silicon wafer by conducting a heat treatment in an oxidizing atmosphere. An SOI wafer is manufactured by bonding the active layer-side silicon wafer to a support-side wafer through this buried oxide film. When the temperature is represented by T (°C) and the interstitial oxygen concentration in the active layer-side silicon wafer is represented by [Oi] (atoms/cm3), the oxidizing heat treatment satisfies the following expression: [Oi] <= 2.123x1021 exp (-1.035/k (T + 273)).