METHOD OF FORMING AN ISOLATION LAYER IN A FLASH MEMORY DEVICE,申请号KR20040036111-传众专利搜索

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发明名称	METHOD OF FORMING AN ISOLATION LAYER IN A FLASH MEMORY DEVICE
摘要
申请公布号	KR20050111416(A)	申请公布日期	2005.11.25
申请号	KR20040036111	申请日期	2004.05.20
申请人	HYNIX SEMICONDUCTOR INC.	发明人	CHO, WHEE WON
分类号	H01L21/76;(IPC1-7):H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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