| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor device provided with a bump electrode by using a negative type resist and a projection aligner. SOLUTION: A back electrode 1 composed of a conductive film deposited on the back of a semiconductor wafer 11 is electrically conducted to an underlaying metal film 8c deposited on the semiconductor wafer 11 on the side face of the semiconductor wafer 11. A negative type resist film 2 formed on the semiconductor wafer 11 is exposed by the projection aligner, and developed to form an opening 6b. By an electrolytic plating to be electrically supplied through the side from the back of the semiconductor wafer 11, a metal film 9a to be the bump electrode is deposited in the opening 6b. COPYRIGHT: (C)2006,JPO&NCIPI
|
