发明名称 |
Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxides |
摘要 |
An insulating interlayer for use in complementary metal oxide semiconductor (CMOS) that prevents unwanted shifts in threshold voltage and flatband voltage is provided. The insulating interlayer is located between a gate dielectric having a dielectric constant of greater than 4.0 and a Si-containing gate conductor. The insulating interlayer of the present invention is any metal nitride, that optionally may include oxygen, that is capable of stabilizing the threshold and flatband voltages. In a preferred embodiment, the insulating interlayer is aluminum nitride or aluminum oxynitride and the gate dielectric is hafnium oxide, hafnium silicate or hafnium silicon oxynitride. The present invention is particularly useful in stabilizing the threshold and flatband voltage of p-type field effect transistors.
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申请公布号 |
US2005258491(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20040845719 |
申请日期 |
2004.05.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOJARCZUK NESTOR A.JR.;CARTIER EDUARD A.;FRANK MARTIN M.;GOUSEV EVGENI;GUHA SUPRATIK;NARAYANAN VIJAY |
分类号 |
H01L21/8234;H01L21/28;H01L21/8238;H01L27/088;H01L27/092;H01L29/49;H01L29/51;H01L29/76;H01L29/78;H01L29/786;H01L51/00;H01L51/05;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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