发明名称 |
Vertical thin film transistor electronics |
摘要 |
Disclosed here is the design of a new vertical thin film transistor (VTFT) using hydrogenated amorphous silicon (a-Si:H) technology. This design allows the channel length to be scaled down to nanometer-scale (100 nm and beyond) as well as the smallest possible TFT size on glass, plastic, or other common types of substrates, based on the standard photo-etching and thin film deposition processes. The emphasis of using the standard processes for the new VTFTs has a strong implication that no additional process equipment and capital investments are required for technological advancements and gains in performance.
|
申请公布号 |
US2005258427(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20050133411 |
申请日期 |
2005.05.20 |
申请人 |
CHAN ISAAC W T;NATHAN AROKIA |
发明人 |
CHAN ISAAC W.T.;NATHAN AROKIA |
分类号 |
H01L21/336;H01L29/04;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|