Serially connected thin film transistors and fabrication methods thereof

摘要

Serially connected thin film transistor (TFT) structure include an active layer shared by an N-type TFT region and a P-type TFT region. A contact hole is formed in an N/P junction between the N-type TFT region and the P-type TFT region and conductive carriers within an N-doped region at one end can be electrically connected to a P-doped region at the other end by a conductive layer formed in the contact hole, without formation of depletion regions at the N/P junction. Moreover, the N-type TFT region or the P-type TFT region is formed using the exposed gate insulating layer in mask regions on both sides of the gate electrode as ion implanting masks and lightly doped drain regions and source/drain regions are also simultaneously formed.