发明名称 |
Non-volatile resistance switching memory |
摘要 |
Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C. |
申请公布号 |
US2005260839(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20050105849 |
申请日期 |
2005.04.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ALLENSPACH ROLF;BEDNORZ JOHANNES G.;MEIJER GERHARD I.;LAM CHUNG H.;STUTZ RICHARD;WIDMER DANIEL |
分类号 |
H01L21/20;H01L21/8238;H01L27/10;H01L45/00;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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