| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting element of a high luminance. <P>SOLUTION: A light-emitting layer is formed on the GaP substrate, and a first to fourth sides of the GaP substrate, which emits light from the light-emitting layer, is etched after forming a metal layer on the sides or is etched after spraying particles there, or the first or fourth side formed by a dicing blade is etched, thereby, a plurality of uneveness are formed on the first to fourth sides. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
