发明名称 |
SOLID-STATE IMAGING DEVICE, OPTICAL SENSOR, AND SOLID-STATE IMAGING DEVICE OPERATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a solid-sate imaging device and an optical sensor which can have a wide dynamic range while maintaining a high sensitivity and a high S/N ratio, and a solid-state device operation method for having a wide dynamic range while maintaining the high sensitivity and the high S/N ratio. SOLUTION: Each of the pixels has a photodiode PD for receiving light and generating an accumulating photoelectric charge, and an accumulation capacity element C<SB>S</SB>for accumulating the photoelectric charge flowing out from the photodiode which are connected via a transfer transistor Tr1. The pixels are accumulated in an array shape. Here, the accumulation capacity element C<SB>S</SB>has a configuration for accumulating the photoelectric charge flowing out from the photodiode PD in an accumulation capacity element accumulation period T<SB>CS</SB>set with a predetermined period ratio from the accumulation period of the photodiode PD. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005328493(A) |
申请公布日期 |
2005.11.24 |
申请号 |
JP20040322768 |
申请日期 |
2004.11.05 |
申请人 |
SUGAWA SHIGETOSHI;TEXAS INSTR JAPAN LTD |
发明人 |
SUGAWA SHIGETOSHI;ADACHI OSAMU;YAHATA KYOICHI;TERADA TATSUYA |
分类号 |
H01L27/146;H04N5/335;H04N5/355;H04N5/369;H04N5/374;H04N5/3745;(IPC1-7):H04N5/335 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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