SEMICONDUCTOR ELEMENT INCLUDING TRENCH ELEMENT SEPARATION FILM AND MANUFACTURING METHOD FOR SUCH SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element including a trench element separation film that prevents charge trap and endures the application of a high gate voltage, and to provide a manufacturing method for the semiconductor element. SOLUTION: The semiconductor element comprises at least one or more layers of insulating films which are formed on the inner surface of a trench and include CVD oxide films containing nitrogen, and a nitride film liner formed on a charge trap preventive insulating film. COPYRIGHT: (C)2006,JPO&NCIPI