发明名称 Semiconductor device
摘要 In a semiconductor layer of the first conductivity type, a first diffusion region of the second conductivity type is formed which includes a low resistance layer and a high resistance layer. This semiconductor layer of the first conductivity type has its thickness that is less than or equal to the lateral width of the high resistance layer.
申请公布号 US2005258478(A1) 申请公布日期 2005.11.24
申请号 US20040893271 申请日期 2004.07.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HOKOMOTO YOSHITAKA;TAKANO AKIO;TANAKA BUNGO
分类号 H01L29/78;H01L21/8234;H01L27/088;H01L29/36;(IPC1-7):H01L29/36 主分类号 H01L29/78
代理机构 代理人
主权项
地址